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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4960 DESCRIPTION *High Collector-Base Breakdown Voltage: V(BR)CBO= 900V(Min) *High Switching Speed APPLICATIONS *Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage IC Collector Current-Continuous w ww scs .i 900 V 900 V 800 V 7 V 1 A 2 A 0.3 A .cn mi e ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @ TC=25 40 W PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 3 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 1mA; IB= 0 B 2SC4960 MIN 800 TYP. MAX UNIT V IC= 0.2A; IB= 40mA IC= 0.2A; IB= 40mA VCB= 900V; IE= 0 VEB= 7V; IC= 0 IC= 50mA; VCE= 5V 1.5 1.0 50 50 V V A A Switching times ton tstg tf Turn-On Time Storage Time Fall Time w w. w sem isc IC= 0.5A; VCE= 5V IC= 50mA; VCE= 10V; f= 1MHz .cn i 3 6 4 MHz 1.0 3.0 1.0 s s s IC= 0.2A; IB1= 40mA, IB2= -80mA; VCC= 250V isc Websitewww.iscsemi.cn 2 |
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